Chemical vapor deposition (CVD) and atomic layer deposition (ALD) semiconductor chips.
Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are two important thin-film deposition techniques used in the semiconductor industry. CVD is a general term used to describe any process in which a solid material is deposited from a gaseous phase. ALD is a specific type of CVD that uses sequential, self-limiting reactions to deposit thin films with atomic-level thickness control.
CVD and ALD equipment for semiconductor chips is typically divided into three categories: batch, single-wafer, and spatial.
Batch CVD and ALD systems are designed to process multiple wafers at the same time. This approach is often used for high-volume manufacturing applications, such as DRAM production. Batch systems typically have a lower throughput than single-wafer systems, but they can be more cost-effective for large batch sizes.
Single-wafer CVD and ALD systems process wafers one at a time. This approach is often used for low-volume manufacturing applications, such as logic chip production, or for applications where high uniformity and conformality are required. Single-wafer systems typically have a higher throughput than batch systems, but they can be more expensive.
Spatial CVD and ALD systems are a hybrid approach that combines the advantages of batch and single-wafer systems. Spatial systems process multiple wafers at the same time, but each wafer is processed in its own separate chamber. This approach provides the high throughput of a batch system with the uniformity and conformality of a single-wafer system.
Some of the leading suppliers of CVD and ALD equipment for semiconductor chips include:
• ASMI
• Applied Materials
• Lam Research
• Tokyo Electron
• Veeco
These companies offer a wide range of CVD and ALD systems to meet the needs of different semiconductor manufacturers.
Examples of CVD and ALD equipment used in semiconductor manufacturing:
CVD:
• LPCVD (low-pressure CVD): used to deposit thin films of polysilicon, silicon dioxide, and other materials
• PECVD (plasma-enhanced CVD): used to deposit thin films of silicon nitride, silicon oxynitride, and other materials
• MOCVD (metalorganic CVD): used to deposit thin films of gallium arsenide, indium phosphide, and other compound semiconductors
ALD:
• Thermal ALD: used to deposit thin films of high-k gate dielectrics, metal gate electrodes, and other materials at low temperatures
• Plasma-enhanced ALD (PEALD): used to deposit thin films of high-k gate dielectrics, metal gate electrodes, and other materials at higher temperatures
CVD and ALD equipment are essential tools for manufacturing modern semiconductor chips. These tools are used to deposit a wide range of thin films, including gate dielectrics, metal gate electrodes, interconnect materials, and more. CVD and ALD equipment are constantly being updated and improved to meet the demands of the semiconductor industry.
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